CGD65B200S2-T13
CGD65B200S2-T13
Part number:
4768-CGD65B200S2-T13TR-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Cambridge GaN Devices
Type
650V GAN HEMT,
Encapsulation
Package
Tape & Reel (TR)
RoHS:
NO
Quantity
4555
$0.3640
Minimun: 1
multiples: 1
Quantity
Price
Total
1
$0.3640
$0.3640
10
$0.3056
$3.0560
100
$0.2472
$24.7200
500
$0.2200
$110.0000
1000
$0.1880
$188.0000
2000
$0.1768
$353.6000
5000
$0.1704
$852.0000
CGD65B200S2-T13 NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrCambridge GaN Devices
SeriesICeGaN™
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C8.5A (Tc)
Rds On (Max) @ Id, Vgs280mOhm @ 600mA, 12V
FET FeatureCurrent Sensing
Vgs(th) (Max) @ Id4.2V @ 2.75mA
Supplier Device Package8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)9V, 20V
Vgs (Max)+20V, -1V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs1.4 nC @ 12 V
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